国家/地区 China（3）
关键词
出版物
出版时间 2017（3）
机构 HEBEI SEMICOND RES INST（3）
作者 FENG ZH（3）

Effect of surface pretreatment on GaN van der Waals epitaxy growth on graphene

ACTA PHYSICA SINICA

WANG B, FANG YL, YIN JY, LIU QB, ZHANG ZR, GUO YM, LI J, LU WL, FENG ZH

Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, LIU QB, HAN TT, DUN SB, WANG JJ, ZHOU CJ, GUO JC, LV YJ, FENG ZH, CAI SJ

High-frequency noise characterization of graphene field effect transistors on SiC substrates

APPLIED PHYSICS LETTERS

YU C, HE ZZ, SONG XB, LIU QB, DUN SB, HAN TT, WANG JJ, ZHOU CJ, GUO JC, LV YJ, CAI SJ, FENG ZH