国家/地区 China（5）
关键词 GRAPHENE（2）
出版物
出版时间 2014（2） 2016（2）
机构 HEBEI SEMICOND RES INST（5）
作者 LU WL（5）

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

APPLIED PHYSICS LETTERS

YU C, LIU QB, LI J, LU WL, HE ZZ, CAI SJ, FENG ZH

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

CHINESE PHYSICS LETTERS

LIU QB, YU C, LI J, SONG XB, HE ZZ, LU WL, GU GD, WANG YG, FENG ZH

Effect of surface pretreatment on GaN van der Waals epitaxy growth on graphene

ACTA PHYSICA SINICA

WANG B, FANG YL, YIN JY, LIU QB, ZHANG ZR, GUO YM, LI J, LU WL, FENG ZH

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

CHINESE PHYSICS B

HE ZZ, YANG KW, YU C, LIU QB, WANG JJ, LI J, LU WL, FENG ZH, CAI SJ

Epitaxial Graphene on Sapphire Substrate by Chemical Vapor Deposition

ACTA PHYSICOCHIMICA SINICA

LIU QB, YU C, HE ZZ, WANG JJ, LI J, LU WL, FENG ZH