国家/地区 France（5）
关键词
出版物
出版时间 2013（5）
机构 UNIV PARIS 1.（3）
作者 DOLLFUS P（5）

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

APPLIED PHYSICS LETTERS

BERRADA S, NGUYEN VH, QUERLIOZ D, STMARTIN J, ALARCON A, CHASSAT C, BOURNEL A, DOLLFUS P

Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings

PHYSICAL REVIEW B

NGUYEN VH, NIQUET YM, DOLLFUS P

Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

JOURNAL OF COMPUTATIONAL ELECTRONICS

NGUYEN VH, SAINTMARTIN J, QUERLIOZ D, MAZZAMUTO F, BOURNEL A, NIQUET YM, DOLLFUS P

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ALARCON A, NGUYEN VH, BERRADA S, QUERLIOZ D, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Disorder effects on electronic bandgap and transport in graphene-nanomesh-based structures

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, NGUYEN MC, NGUYEN HV, DOLLFUS P