国家/地区 France（5）
关键词
出版物 SCIENTIFIC REPORTS（2）
出版时间 2014（5）
机构 CNRS（2）
作者 PALLECCHI E（5）

Disorder-perturbed Landau levels in high-electron-mobility epitaxial graphene

PHYSICAL REVIEW B

MAERO S, TORCHE A, PHUPHACHONG T, PALLECCHI E, OUERGHI A, FERREIRA R, DE VAULCHIER LA, GULDNER Y

Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures

NANO RESEARCH

VELEZFORT E, PALLECCHI E, SILLY MG, BAHRI M, PATRIARCHE G, SHUKLA A, SIROTTI F, OUERGHI A

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

SCIENTIFIC REPORTS

PALLECCHI E, LAFONT F, CAVALIERE V, SCHOPFER F, MAILLY D, POIRIER W, OUERGHI A

Graphene nanotransistors for RF charge detection

JOURNAL OF PHYSICS DAPPLIED PHYSICS

PALLECCHI E, WILMART Q, BETZ AC, JHANG SH, FEVE G, BERROIR JM, LEPILLET S, DAMBRINE G, HAPPY H, PLACAIS B

Flower-Shaped Domains and Wrinkles in Trilayer Epitaxial Graphene on Silicon Carbide

SCIENTIFIC REPORTS

LALMI B, GIRARD JC, PALLECCHI E, SILLY M, DAVID C, LATIL S, SIROTTI F, OUERGHI A