国家/地区 France（33）
关键词 GRAPHENE（33）
出版物 JOURNAL OF PHYSICSC.（6） 2D MATERIALS（3） IEEE TRANSACTIONS O.（3）
ACS NANO（2） NANO LETTERS（2） NANOTECHNOLOGY（2）
出版时间 2015（33）
机构 UNIV PARIS 1.（5） UNIV STRASBO.（4） UNIV BORDEAU.（3） CNRS（2）
UNIV PARIS 0.（2） UNIV RENNES .（2）
作者 DOLLFUS P（4） FREGONESE S（4） NGUYEN VH（4） ZIMMER T（4）
SAINTMARTIN .（3） SAMORI P（3） CIESIELSKI A（2） HAAR S（2）
HAPPY H（2） HENRARD L（2） MANEUX C（2） NGUYEN HV（2）

Electrical Compact Modeling of Graphene Base Transistors

ELECTRONICS

FREGONESE S, VENICA S, DRIUSSI F, ZIMMER T

An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

AGUIRREMORALES JD, FREGONESE S, MUKHERJEE C, MANEUX C, ZIMMER T

Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid

NANOTECHNOLOGY

GUNES F, AREZKI H, PIERUCCI D, ALAMARGUY D, ALVAREZ J, KLEIDER JP, DAPPE YJ, OUERGHI A, BOUTCHICH M

Dependence of the Raman spectrum characteristics on the number of layers and stacking orientation in few-layer graphene

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

BAYLE M, RECKINGER N, HUNTZINGER JR, FELTEN A, BAKARAKI A, LANDOIS P, COLOMER JF, HENRARD L, ZAHAB AA, SAUVAJOL JL, PAILLET M

Maleimides Designed for Self-Assembly and Reactivity on Graphene

MOLECULES

MATTIOLI C, GOURDON A

TCAD Simulations of graphene field-effect transistors based on the quantum capacitance effect

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

HAFSI B, BOUBAKER A, ISMAIL N, KALBOUSSI A, LMIMOUNI K

Synthesis of functionalized few-layer graphene through fast electrochemical expansion of graphite

JOURNAL OF ELECTROANALYTICAL CHEMISTRY

LEROUX YR, BERGAMINI JF, ABABOU S, LE BRETON JC, HAPIOT P

Strain-induced modulation of Dirac cones and van Hove singularities in a twisted graphene bilayer

2D MATERIALS

NGUYEN VH, DOLLFUS P

Graphene-based nanocomposites for structural and functional applications: using 2-dimensional materials in a 3-dimensional world

2D MATERIALS

SAMORI P, KINLOCH IA, FENG X, PALERMO V

Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES

WEI W, ZHOU X, DEOKAR G, KIM H, BELHAJ MM, GALOPIN E, PALLECCHI E, VIGNAUD D, HAPPY H