国家/地区 France（9）
关键词 GRAPHENE（6） COMPACT MODEL（5） TRANSISTOR（3）
GRAPHENE FET GFET（2） VERILOGA（2）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（9）
出版时间 2015（4）
机构 UNIV BORDEAU.（6）
作者 FREGONESE S（6） ZIMMER T（6） HAPPY H（4） MANEUX C（4）
AGUIRREMORAL.（3） MUKHERJEE C（3） MENG N（2） VIGNAUD D（2）
WEI W（2）

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ALARCON A, NGUYEN VH, BERRADA S, QUERLIOZ D, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Characterization and Modeling of Graphene Transistor Low-Frequency Noise

IEEE TRANSACTIONS ON ELECTRON DEVICES

GRANDCHAMP B, FREGONESE S, MAJEK C, HAINAUT C, MANEUX C, MENG N, HAPPY H, ZIMMER T

Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

MENG N, FERNANDEZ JF, VIGNAUD D, DAMBRINE G, HAPPY H

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

AGUIRREMORALES JD, FREGONESE S, MUKHERJEE C, WEI W, HAPPY H, MANEUX C, ZIMMER T

Comments on "Optimization of a Compact I-V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration"

IEEE TRANSACTIONS ON ELECTRON DEVICES

FREGONESE S, ZIMMER T

An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

AGUIRREMORALES JD, FREGONESE S, MUKHERJEE C, MANEUX C, ZIMMER T

Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES

WEI W, ZHOU X, DEOKAR G, KIM H, BELHAJ MM, GALOPIN E, PALLECCHI E, VIGNAUD D, HAPPY H

Graphene Transistor-Based Active Balun Architectures

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZIMMER T, FREGONESE S

Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design

IEEE TRANSACTIONS ON ELECTRON DEVICES

MUKHERJEE C, AGUIRREMORALES JD, FREGONESE S, ZIMMER T, MANEUX C