国家/地区 Germany（6）
关键词
出版物 PHYSICAL REVIEW LET.（2）
出版时间 2009（2） 2013（2）
机构 MAX PLANCK G.（2）
作者 SCHEFFLER M（6）

Structural investigation of nanocrystalline graphene grown on (6 root 3 x 6 root 3)R30 degrees-reconstructed SiC surfaces by molecular beam epitaxy

NEW JOURNAL OF PHYSICS

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, FROMM F, SEYLLER T, NEMEC L, BLUM V, SCHEFFLER M, LOPES JMJ, RIECHERT H

Thermodynamic Equilibrium Conditions of Graphene Films on SiC

PHYSICAL REVIEW LETTERS

NEMEC L, BLUM V, RINKE P, SCHEFFLER M

Probing Local Hydrogen Impurities in Quasi-Free-Standing Graphene

ACS NANO

SCHEFFLER M, HABERER D, PETACCIA L, FARJAM M, SCHLEGEL R, BAUMANN D, HANKE T, GRUNEIS A, KNUPFER M, HESS C, BUCHNER B

Two-dimensional electron gases: Theory of ultrafast dynamics of electron-phonon interactions in graphene, surfaces, and quantum wells

JOURNAL OF APPLIED PHYSICS

RICHTER M, CARMELE A, BUTSCHER S, BUCKING N, MILDE F, KRATZER P, SCHEFFLER M, KNORR A

Two-Step Mechanism for Low-Temperature Oxidation of Vacancies in Graphene

PHYSICAL REVIEW LETTERS

CARLSSON JM, HANKE F, LINIC S, SCHEFFLER M

Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3 x 3)-3C-SiC((1)over-bar(1)over-bar(1)over-bar) reconstruction

PHYSICAL REVIEW B

NEMEC L, LAZAREVIC F, RINKE P, SCHEFFLER M, BLUM V