| 国家/地区 |
Germany(3)
|
| 关键词 | |
| 出版物 | |
| 出版时间 |
2012(3)
|
| 机构 | TECH UNIV DA.(3) |
| 作者 |
BIRINCI E(3)
|
JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
WESSELY PJ, WESSELY F, BIRINCI E, SCHWALKE U, RIEDINGER B
Silicon-CMOS compatible in-situ CCVD grown graphene transistors with ultra-high on/off-current ratio
PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES
WESSELY PJ, WESSELY F, BIRINCI E, BECKMANN K, RIEDINGER B, SCHWALKE U
ELECTROCHEMICAL SOLID STATE LETTERS
WESSELY PJ, WESSELY F, BIRINCI E, RIEDINGER B, SCHWALKE U
