国家/地区 Germany（7）
关键词 DOPING（2） EPITAXIAL GRAPHENE（2） FIELD EFFECT（2）
GRAPHENE（2）
出版物 2D MATERIALS（2）
出版时间 2014（4）
机构 TECH UNIV CHEMNITZ（7）
作者 SEYLLER T（7）

Growth of Nanocrystalline MoSe2 Monolayers on Epitaxial Graphene from Amorphous Precursors

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

GOHLER F, HADLAND EC, SCHMIDT C, ZAHN DRT, SPECK F, JOHNSON DC, SEYLLER T

The Hall coefficient: a tool for characterizing graphene field effect transistors

2D MATERIALS

WEHRFRITZ P, SEYLLER T

Polarization doping of graphene on silicon carbide

2D MATERIALS

MAMMADOV S, RISTEIN J, KOCH RJ, OSTLER M, RAIDEL C, WANKE M, VASILIAUSKAS R, YAKIMOVA R, SEYLLER T

Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WEHRFRITZ P, FROMM F, MALZER S, SEYLLER T

Buffer layer free graphene on SiC(0001) via interface oxidation in water vapor

CARBON

OSTLER M, FROMM F, KOCH RJ, WEHRFRITZ P, SPECK F, VITA H, BOTTCHER S, HORN K, SEYLLER T

Science and Technology of Graphene

ANNALEN DER PHYSIK

SEYLLER T

Robust Phonon-Plasmon Coupling in Quasifreestanding Graphene on Silicon Carbide

PHYSICAL REVIEW LETTERS

KOCH RJ, FRYSKA S, OSTLER M, ENDLICH M, SPECK F, HANSEL T, SCHAEFER JA, SEYLLER T