国家/地区 Germany（6）
关键词 GRAPHENE（2） GROWTH（2）
出版物 PHYSICAL REVIEW B（2）
出版时间 2010（2）
机构 UNIV ERLANGEN NURNBERG（6）
作者 OSTLER M（6）

Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces

PHYSICAL REVIEW B

OSTLER M, DERETZIS I, MAMMADOV S, GIANNAZZO F, NICOTRA G, SPINELLA C, SEYLLER T, LA MAGNA A

Growth and electronic structure of nitrogen-doped graphene on Ni(111)

PHYSICAL REVIEW B

KOCH RJ, WESER M, ZHAO W, VINES F, GOTTERBARM K, KOZLOV SM, HOFERT O, OSTLER M, PAPP C, GEBHARDT J, STEINRUCK HP, GORLING A, SEYLLER T

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

APPLIED PHYSICS LETTERS

SPECK F, JOBST J, FROMM F, OSTLER M, WALDMANN D, HUNDHAUSEN M, WEBER HB, SEYLLER T

Automated preparation of high-quality epitaxial graphene on 6H-SiC(0001)

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

OSTLER M, SPECK F, GICK M, SEYLLER T

Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RISTEIN J, ZHANG WY, SPECK F, OSTLER M, LEY L, SEYLLER T

Growth and Intercalation of Graphene on Silicon Carbide Studied by Low-Energy Electron Microscopy

ANNALEN DER PHYSIK

SPECK F, OSTLER M, BESENDORFER S, KRONE J, WANKE M, SEYLLER T