国家/地区 Germany（10）
关键词 GRAPHENE（2） GROWTH（2）
出版物 JOURNAL OF PHYSICS .（2） PHYSICA STATUS SOLI.（2） PHYSICAL REVIEW B（2）
出版时间 2010（3） 2011（3） 2008（2）
机构 UNIV ERLANGEN NURNBERG（10）
作者 SPECK F（10）

Implanted bottom gate for epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WALDMANN D, JOBST J, FROMM F, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

APPLIED PHYSICS LETTERS

SPECK F, JOBST J, FROMM F, OSTLER M, WALDMANN D, HUNDHAUSEN M, WEBER HB, SEYLLER T

Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)

SOLID STATE COMMUNICATIONS

JOBST J, WALDMANN D, SPECK F, HIRNER R, MAUDE DK, SEYLLER T, WEBER HB

Bottom-gated epitaxial graphene

NATURE MATERIALS

WALDMANN D, JOBST J, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

Automated preparation of high-quality epitaxial graphene on 6H-SiC(0001)

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

OSTLER M, SPECK F, GICK M, SEYLLER T

Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RISTEIN J, ZHANG WY, SPECK F, OSTLER M, LEY L, SEYLLER T

Quantum oscillations and quantum Hall effect in epitaxial graphene

PHYSICAL REVIEW B

JOBST J, WALDMANN D, SPECK F, HIRNER R, MAUDE DK, SEYLLER T, WEBER HB

Epitaxial graphene: a new material

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

SEYLLER T, BOSTWICK A, EMTSEV KV, HORN K, LEY L, MCCHESNEY JL, OHTA T, RILEY JD, ROTENBERG E, SPECK F

Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

PHYSICAL REVIEW B

EMTSEV KV, SPECK F, SEYLLER T, LEY L, RILEY JD

Growth and Intercalation of Graphene on Silicon Carbide Studied by Low-Energy Electron Microscopy

ANNALEN DER PHYSIK

SPECK F, OSTLER M, BESENDORFER S, KRONE J, WANKE M, SEYLLER T