国家/地区 |
India(2)![]() |
关键词 | |
出版物 | |
出版时间 |
2019(2)![]() |
机构 | |
作者 |
SENGUPTA J(2)![]() |
Modeling and computation of double drift region transit time diode performance based on graphene-SiC
INTERNATIONAL JOURNAL OF NUMERICAL MODELLINGELECTRONIC NETWORKS DEVICES FIELDS
GHIVELA GC, SENGUPTA J
BULLETIN OF MATERIALS SCIENCE
SENGUPTA J, DAS K, NANDI UN, JACOB C