国家/地区 India（4）
关键词 NONVOLATILE MEMORY（4）
出版物
出版时间
机构
作者 KUMAR A（2） KUMARI K（2） RAY SJ（2） THAKUR AD（2）

Structural and resistive switching behaviour in lanthanum strontium manganite - Reduced graphene oxide nanocomposite system

JOURNAL OF ALLOYS COMPOUNDS

KUMARI K, KUMAR A, KOTNEES DK, BALAKRISHNAN J, THAKUR AD, RAY SJ

Enhanced resistive switching in graphene oxide based composite thin film for nonvolatile memory applications

MATERIALS RESEARCH EXPRESS

SINGH R, KUMAR R, KUMAR A, KUMAR D, KUMAR M

Role of tunneling layer in graphene-oxide based organic nonvolatile memory transistors

ORGANIC ELECTRONICS

PARK Y, GUPTA D, LEE C, HONG Y

The effect of graphene and reduced graphene oxide on the resistive switching behavior of La0.7Ba0.3MnO3

MATERIALS TODAY COMMUNICATIONS

KUMARI K, THAKUR AD, RAY SJ