国家/地区 Iran（5）
关键词 DIRAC EQUATION（2） ENERGY LEVEL（2） GRAPHENE QUANTUM DO.（2）
TUNNELING TRANSISTO.（2）
出版物
出版时间 2017（5）
机构 ISLAMIC AZAD.（3） SHARIF UNIV .（2）
作者 DARVISH G（5）

Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

HORRI A, FAEZ R, DARVISH G

Modeling of a Vertical Tunneling Transistor Based on Graphene-MoS2 Heterostructure

IEEE TRANSACTIONS ON ELECTRON DEVICES

HORRI A, FAEZ R, POURFATH M, DARVISH G

A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure

JOURNAL OF APPLIED PHYSICS

HORRI A, FAEZ R, POURFATH M, DARVISH G

Analytical modeling of photon absorption coefficient in mono and bilayer circular graphene quantum dots for light absorber applications

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

TAMANDANI S, DARVISH G

Charge transfer modeling in monolayer circular graphene quantum dots-ZnO nanowires system for application in photovoltaic devices

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

TAMANDANI S, DARVISH G