国家/地区 Iran（3）
关键词 TUNNELING TRANSISTO.（2）
出版物
出版时间 2017（3）
机构 SHARIF UNIV .（2）
作者 HORRI A（3）

Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

HORRI A, FAEZ R, DARVISH G

Modeling of a Vertical Tunneling Transistor Based on Graphene-MoS2 Heterostructure

IEEE TRANSACTIONS ON ELECTRON DEVICES

HORRI A, FAEZ R, POURFATH M, DARVISH G

A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure

JOURNAL OF APPLIED PHYSICS

HORRI A, FAEZ R, POURFATH M, DARVISH G