国家/地区 Italy（6）
关键词 GRAPHENE（4） HETEROJUNCTION（2） TRANSFER CHARACTERI.（2）
出版物 NANOTECHNOLOGY（3）
出版时间 2011（2） 2017（2）
机构 UNIV SALERNO（6）
作者 SCHROEDER T（6）

Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors

DIAMOND RELATED MATERIALS

DI BARTOLOMEO A, SANTANDREA S, GIUBILEO F, ROMEO F, PETROSINO M, CITRO R, BARBARA P, LUPINA G, SCHROEDER T, RUBINO A

Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors

NANOTECHNOLOGY

DI BARTOLOMEO A, GIUBILEO F, SANTANDREA S, ROMEO F, CITRO R, SCHROEDER T, LUPINA G

Field emission from single and few-layer graphene flakes

APPLIED PHYSICS LETTERS

SANTANDREA S, GIUBILEO F, GROSSI V, SANTUCCI S, PASSACANTANDO M, SCHROEDER T, LUPINA G, DI BARTOLOMEO A

Graphene enhanced field emission from InP nanocrystals

NANOTECHNOLOGY

IEMMO L, DI BARTOLOMEO A, GIUBILEO F, LUONGO G, PASSACANTANDO M, NIU G, HATAMI F, SKIBITZKI O, SCHROEDER T

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

2D MATERIALS

DI BARTOLOMEO A, LUONGO G, GIUBILEO F, FUNICELLO N, NIU G, SCHROEDER T, LISKER M, LUPINA G

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

NANOTECHNOLOGY

DI BARTOLOMEO A, GIUBILEO F, ROMEO F, SABATINO P, CARAPELLA G, IEMMO L, SCHROEDER T, LUPINA G