国家/地区 Japan（5）
关键词 GRAPHENE（2）
出版物
出版时间 2018（3）
机构 NAGOYA INST TECHNOL（5）
作者 MAHYAVANSHI RD（5）

Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction

APPLIED PHYSICS LETTERS

RANADE AK, MAHYAVANSHI RD, DESAI P, KATO M, TANEMURA M, KALITA G

Switching isotropic and anisotropic graphene growth in a solid source CVD system

CRYSTENGCOMM

JAISI BP, SHARMA KP, SHARMA S, MAHYAVANSHI RD, KALITA G, TANEMURA M

Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

KALITA G, KOBAYASHI M, SHAARIN MD, MAHYAVANSHI RD, TANEMURA M

Photovoltaic Action in Graphene-Ga2O3 Heterojunction with Deep-Ultraviolet Irradiation

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

KALITA G, MAHYAVANSHI RD, DESAI P, RANADE AK, KONDO M, DEWA T, TANEMURA M

Influence of copper foil polycrystalline structure on graphene anisotropic etching

APPLIED SURFACE SCIENCE

SHARMA KP, MAHYAVANSHI RD, KALITA G, TANEMURA M