国家/地区 Japan（10）
关键词 GRAPHENE（10）
出版物 ACS NANO（3） JOURNAL OF THE PHYS.（3）
出版时间 2010（2） 2018（2） 2020（2）
机构 UNIV TSUKUBA（5） KYUSHU UNIV（3）
作者 OKADA S（10）

Electronic structure of graphene under periodic uniaxial tensile strain

JAPANESE JOURNAL OF APPLIED PHYSICS

TOMORI H, MARUYAMA M, OKADA S

Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistors

APPLIED PHYSICS EXPRESS

OKADA S, MARUYAMA M, GAO YL

Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire

ACS NANO

SUENAGA K, JI HG, LIN YC, VINCENT T, MARUYAMA M, AJI AS, SHIRATSUCHI Y, DING D, KAWAHARA K, OKADA S, PANCHAL V, KAZAKOVA O, HIBINO H, SUENAGA K, AGO H

Band-Gap Engineering of Graphene Heterostructures by Substitutional Doping with B3N3

CHEMPHYSCHEM

SAWAHATA H, MARUYAMA M, CUONG NT, OMACHI H, SHINOHARA H, OKADA S

Enhanced Chemical Reactivity of Graphene Induced by Mechanical Strain

ACS NANO

BISSETT MA, KONABE S, OKADA S, TSUJI M, AGO H

Electronic Structure of Graphene with a Topological Line Defect

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

OKADA S, KAWAI T, NAKADA K

Asymmetrical Electronic Structure of Folded Graphene

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

TAKAGI Y, OKADA S

Edge States and Flat Bands of Graphene Nanoribbons with Edge Modification

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

WAKABAYASHI K, OKADA S, TOMITA R, FUJIMOTO S, NATSUME Y

Gate-Tunable Dirac Point of Molecular Doped Graphene

ACS NANO

SOLISFERNANDEZ P, OKADA S, SATO T, TSUJI M, AGO H

Dynamics of a charged Ne atom near graphene edges under a positive static electric field

FLATCHEM

GAO YL, OKADA S