国家/地区 Japan（6）
关键词 HETEROSTRUCTURE（6）
出版物
出版时间 2020（2）
机构 NATL INST MA.（2） UNIV TOKYO（2）
作者 TANIGUCHI T（4） WATANABE K（4） MUKHERJEE B（2） NAGASHIO K（2）
NAKAHARAI S（2） UWANNO T（2） WAKAYAMA Y（2）

ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

ADVANCED ELECTRONIC MATERIALS

MUKHERJEE B, HAYAKAWA R, WATANABE K, TANIGUCHI T, NAKAHARAI S, WAKAYAMA Y

Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-Layer-ReS2/h-BN/Graphene Heterostructures

ADVANCED FUNCTIONAL MATERIALS

MUKHERJEE B, ZULKEFLI A, WATANABE K, TANIGUCHI T, WAKAYAMA Y, NAKAHARAI S

Controlled CVD growth of lateral and vertical graphene/h-BN heterostructures

APPLIED PHYSICS EXPRESS

MAKINO R, MIZUNO S, KAGESHIMA H, HIBINO H

Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

ACS APPLIED MATERIALS INTERFACES

UWANNO T, TANIGUCHI T, WATANABE K, NAGASHIO K

van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene

NANO LETTERS

HONG YJ, LEE WH, WU YP, RUOFF RS, FUKUI T

Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system

2D MATERIALS

UWANNO T, HATTORI Y, TANIGUCHI T, WATANABE K, NAGASHIO K