国家/地区 Japan（34）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（34）
出版时间 2011（34）
机构 HOKKAIDO UNI.（8） TOHOKU UNIV（7） NTT CORP（4） OSAKA UNIV（4）
UNIV AIZU（2）
作者 OTSUJI T（8） FUKIDOME H（5） HANDA H（5） SUEMITSU M（5）
HIBINO H（4） RYZHII V（4） SANO E（4） TAKAHASHI R（4）
ABE S（3） JUNG MH（3） KAGESHIMA H（3） MATSUMOTO K（3）
NAGASE M（3） OHNO Y（3） SUEMITSU T（3） TACHIKAWA H（3）
IMAIZUMI K（2） INOUE K（2） IYAMA T（2） KONISHI K（2）

Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface

JAPANESE JOURNAL OF APPLIED PHYSICS

KAGESHIMA H, HIBINO H, YAMAGUCHI H, NAGASE M

Effect of Heating and Cooling of Photogenerated Electron-Hole Plasma in Optically Pumped Graphene on Population Inversion

JAPANESE JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, MITIN V, SATOU A, OTSUJI T

Impact of Site-Potential Asymmetry on Electron Transport in Graphene

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E

First-Principles Calculation of the Interlayer Distance of the Two-Layer Graphene

JAPANESE JOURNAL OF APPLIED PHYSICS

ALAM MS, LIN JB, SAITO M

Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process

JAPANESE JOURNAL OF APPLIED PHYSICS

ABE S, HANDA H, TAKAHASHI R, IMAIZUMI K, FUKIDOME H, SUEMITSU M

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

JAPANESE JOURNAL OF APPLIED PHYSICS

EL MOUTAOUAKIL A, KANG HC, HANDA H, FUKIDOME H, SUEMITSU T, SANO E, SUEMITSU M, OTSUJI T

Theoretical Study on Magnetoelectric and Thermoelectric Properties for Graphene Devices

JAPANESE JOURNAL OF APPLIED PHYSICS

KAGESHIMA H, HIBINO H, NAGASE M, SEKINE Y, YAMAGUCHI H

Structural Analysis and Direct Imaging of Rotational Stacking Faults in Few-Layer Graphene Synthesized from Solid Botanical Precursor

JAPANESE JOURNAL OF APPLIED PHYSICS

KALITA G, WAKITA K, UMENO M

Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

NAGASHIO K, TORIUMI A