国家/地区 Japan（8）
关键词 GRAPHENE（3） CONTACT RESISTANCE（2） FET（2）
SILICON（2）
出版物 JAPANESE JOURNAL OF.（4） SOLIDSTATE ELECTRON.（2）
出版时间 2010（8）
机构 TOHOKU UNIV（8）
作者 SUEMITSU M（8）

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

NANOSCALE RESEARCH LETTERS

ABE S, HANDA H, TAKAHASHI R, IMAIZUMI K, FUKIDOME H, SUEMITSU M

Epitaxial graphene top-gate FETs on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T

Epitaxial graphene on silicon substrates

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SUEMITSU M, FUKIDOME H

Epitaxial graphene field-effect transistors on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, SUEMITSU M, OTSUJI T

Epitaxial Growth Processes of Graphene on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

FUKIDOME H, MIYAMOTO Y, HANDA H, SAITO E, SUEMITSU M

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates (vol 49, 04DF17, 2010)

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T

Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

JAPANESE JOURNAL OF APPLIED PHYSICS

OLACVAW R, KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T