国家/地区 Japan（8）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（8）
出版时间 2011（8）
机构 TOHOKU UNIV（4） HOKKAIDO UNI.（2） UNIV AIZU（2）
作者 OTSUJI T（8）

Performance Prediction of Complementary Field-Effect Transistor Circuits Using Graphene with Band Gap Induced by Site-Potential Asymmetry

JAPANESE JOURNAL OF APPLIED PHYSICS

SANO E, OTSUJI T

Effect of Heating and Cooling of Photogenerated Electron-Hole Plasma in Optically Pumped Graphene on Population Inversion

JAPANESE JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, MITIN V, SATOU A, OTSUJI T

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

JAPANESE JOURNAL OF APPLIED PHYSICS

EL MOUTAOUAKIL A, KANG HC, HANDA H, FUKIDOME H, SUEMITSU T, SANO E, SUEMITSU M, OTSUJI T

Characteristics of p-i-n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures

JAPANESE JOURNAL OF APPLIED PHYSICS

RYZHII M, OTSUJI T, MITIN V, RYZHII V

Theoretical Study of Population Inversion in Graphene under Pulse Excitation

JAPANESE JOURNAL OF APPLIED PHYSICS

SATOU A, OTSUJI T, RYZHII V

Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect

JAPANESE JOURNAL OF APPLIED PHYSICS

TAKATSUKA Y, SANO E, RYZHII V, OTSUJI T

Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M