国家/地区 Jordan（6）
关键词 ELECTRONIC PROPERTIE（6）
出版物 JOURNAL OF ELECTRON.（2） SEMICONDUCTORS（2）
出版时间 2023（2）
机构
作者 TALLA JA（4） ABUFARSAKH H（2） ALKHATATBEH .（2） ALMAHMOUD EA（2）
TARAWNEH K（2）

Band Gap Opening of Doped Graphene Stone Wales Defects: Simulation Study

SEMICONDUCTORS

TALLA JA

Influence of uniaxial strain on the electronic properties of doped graphene mono-sheets: a theoretical study

MATERIALS RESEARCH EXPRESS

ALMAHMOUD EA, TALLA JA, ABUFARSAKH H

Structural and Electronic Properties of Rippled Graphene Monolayer: Density Functional Theory

JOURNAL OF ELECTRONIC MATERIALS

TALLA JA, AHMAD MS

Adsorption of 3d transition-metal atoms on two-dimensional penta-graphene: A first-principles study

JOURNAL OF SAUDI CHEMICAL SOCIETY

TARAWNEH K, ALKHATATBEH Y

Ab Initio Investigation of Boron- and Nitrogen-Doped Penta-graphene in the Presence of a Vacancy Defect

JOURNAL OF ELECTRONIC MATERIALS

TARAWNEH K, SHUKRI AA, ALKHATATBEH Y

Structural and Electronic Properties of Rippled Graphene with Different Orientations of Stone-Wales Defects: First-Principles Study

SEMICONDUCTORS

TALLA JA, ALMAHMOUD EA, ALKHAZA LEH K, ABUFARSAKH H