国家/地区 Korea（4）
关键词
出版物 JOURNAL OF MATERIAL.（2）
出版时间 2018（2） 2022（2）
机构 SEJONG UNIV（2）
作者 AFTAB S（4）

Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS2 films

SCIENTIFIC REPORTS

AFZAL AM, KHAN MF, NAZIR G, DASTGEER G, AFTAB S, AKHTAR I, SEO Y, EOM J

Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors

NANOMATERIALS

NAZIR G, KHAN MF, AFTAB S, AFZAL AM, DASTGEER G, REHMAN MA, SEO Y, EOM J

Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

IQBAL MW, RAZZAQ S, NOOR NA, AFTAB S, AFZAL A, ULLAH H, SULEMAN M, ELAHI E

Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr (vol 33, pg 12416, 2022)

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

IQBAL MW, RAZZAQ S, NOOR NA, AFTAB S, AFZAL AM, ULLAH H, SULEMAN M, ELAHI E