国家/地区 Korea（5）
关键词 ATOMIC LAYER DEPOSI.（2） CAPACITANCE EQUIVAL.（2） GRAPHENE（2）
出版物
出版时间 2015（2） 2016（2）
机构 SAMSUNG ADV .（2） SUNGKYUNKWAN.（2）
作者 JEON W（5）

Graphene grain size-dependent synthesis of single-crystalline Sb2Te3 nanoplates and the interfacial thermal transport analysis by Raman thermometry

CARBON

SINGH S, KIM S, JEON W, DHAKAL KP, KIM J, BAIK S

Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

2D MATERIALS

JEONG SJ, KIM HW, HEO J, LEE MH, SONG HJ, KU J, LEE Y, CHO Y, JEON W, SUH H, HWANG S, PARK S

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors

ACS Nano

LEE Y, JEON W, CHO Y, LEE MH, JEONG SJ, PARK J, PARK S

High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

SCIENTIFIC REPORTS

YEOM DY, JEON W, TU NDK, YEO SY, LEE SS, SUNG BJ, CHANG H, LIM JA, KIM H

Graphene-Templated Synthesis of c-Axis Oriented Sb2Te3 Nanoplates by the Microwave-Assisted Solvothermal Method

CHEMISTRY OF MATERIALS

SINGH S, HONG S, JEON W, LEE D, HWANG JY, LIM S, KWON GD, PRIBAT D, SHIN H, KIM SW, BAIK S