国家/地区 Korea（10）
关键词
出版物 APPLIED PHYSICS LET.（4） SCIENTIFIC REPORTS（3）
出版时间 2014（3） 2015（3） 2013（2）
机构 GWANGJU INST.（10）
作者 JUNG U（10）

Chemically induced Fermi level pinning effects of high-k dielectrics on graphene

SCIENTIFIC REPORTS

KIM SY, KIM YJ, JUNG U, LEE BH

Quantitatively estimating defects in graphene devices using discharge current analysis method

SCIENTIFIC REPORTS

JUNG U, LEE YG, KANG CG, LEE S, KIM JJ, HWANG HJ, LIM SK, HAM MH, LEE BH

Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene

APPLIED PHYSICS LETTERS

KANG CG, LEE SK, YOO TJ, PARK W, JUNG U, AHN J, LEE BH

Quantitative analysis of interfacial reactions at a graphene/SiO2 interface using the discharge current analysis method

APPLIED PHYSICS LETTERS

JUNG U, LEE YG, KANG CG, LEE S, LEE BH

Correlation between the hysteresis and the initial defect density of graphene

APPLIED PHYSICS LETTERS

CHO C, LEE YG, JUNG U, KANG CG, LIM S, HWANG HJ, CHOI H, LEE BH

Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors

APPLIED PHYSICS LETTERS

LEE YG, KIM YJ, KANG CG, CHO C, LEE S, HWANG HJ, JUNG U, LEE BH

Demonstration of Complementary Ternary Graphene Field-Effect Transistors

SCIENTIFIC REPORTS

KIM Y, KIM SY, NOH J, SHIM C, JUNG U, LEE SK, CHANG KE, CHO C, LEE BH

Graphene transfer in vacuum yielding a high quality graphene

CARBON

LEE S, LEE SK, KANG CG, CHO C, LEE YG, JUNG U, LEE BH

Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

JUNG U, KIM YJ, KIM Y, LEE YG, LEE BH

A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors

NANOSCALE

KIM YJ, LEE YG, JUNG U, LEE S, LEE SK, LEE BH