国家/地区 Korea（3）
关键词
出版物 APPLIED PHYSICS LETTERS（3）
出版时间
机构
作者 KIM JJ（3）

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

APPLIED PHYSICS LETTERS

LEE YG, KANG CG, JUNG UJ, KIM JJ, HWANG HJ, CHUNG HJ, SEO S, CHOI R, LEE BH

Influence of metal work function on the position of the Dirac point of graphene field-effect transistors

APPLIED PHYSICS LETTERS

PARK N, KIM BK, LEE JO, KIM JJ

Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

APPLIED PHYSICS LETTERS

SEO M, KIM H, KIM YH, NA J, LEE BJ, KIM JJ, LEE I, YUN H, MCALLISTER K, KIM KS, JEONG GH, KIM GT, LEE SW