国家/地区 Korea（3）
关键词 ATOMIC LAYER DEPOSITION（3）
出版物
出版时间 2016（2）
机构 SAMSUNG ADV .（2）
作者 PARK S（3）

Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

2D MATERIALS

JEONG SJ, KIM HW, HEO J, LEE MH, SONG HJ, KU J, LEE Y, CHO Y, JEON W, SUH H, HWANG S, PARK S

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors

ACS Nano

LEE Y, JEON W, CHO Y, LEE MH, JEONG SJ, PARK J, PARK S

The role of oxygen defects engineering via passivation of the Al2O3 interfacial layer for the direct growth of a graphene-silicon Schottky junction solar cell

APPLIED MATERIALS TODAY

KIM M, REHMAN MA, KANG KM, WANG Y, PARK S, LEE HS, ROY SB, CHUN SH, SINGH CA, JUN SC, PARK HH