国家/地区 Korea（2）
关键词 FIELD EFFECT TRANSISTOR（2）
出版物
出版时间
机构 KOREA ADV INST SCI TECHNOL（2）
作者

A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric

SMALL

OH JG, PAK K, KIM CS, BONG JH, HWANG WS, IM SG, CHO BJ

Bistable memory and logic-gate devices fabricated by intercrossed stacking of graphene-ferroelectric hybrid ribbons

MICRO NANO LETTERS

KIM WY, KIM HD, JEON GJ, KANG IK, SHIM HB, KIM TH, LEE HC