国家/地区 Korea（3）
关键词 GRAPHENE（3）
出版物
出版时间
机构 GWANGJU INST.（2）
作者 CHO C（3）

Advantages of a buried-gate structure for graphene field-effect transistor

SEMICONDUCTOR SCIENCE TECHNOLOGY

LEE SK, KIM YJ, HEO S, PARK W, YOO TJ, CHO C, HWANG HJ, LEE BH

Novel multi-bit memory device using metal/PVDF-TrFE/graphene stack

MICROELECTRONIC ENGINEERING

HWANG HJ, YANG JH, KANG SC, CHO C, KANG CG, LEE YG, LEE BH

Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment

IEEE ELECTRON DEVICE LETTERS

KANG CG, LEE SK, LEE YG, HWANG HJ, CHO C, LIM SK, HEO J, CHUNG HJ, YANG H, SEO S, LEE BH