国家/地区 Korea（5）
关键词 GRAPHENE（5）
出版物
出版时间 2018（2） 2019（2）
机构 GWANGJU INST.（3）
作者 HEO S（5）

High-Responsivity Near-Infrared Photodetector Using Gate-Modulated Graphene/Germanium Schottky Junction

ADVANCED ELECTRONIC MATERIALS

CHANG KE, KIM C, YOO TJ, KWON MG, HEO S, KIM SY, HYUN Y, YOO JI, KO HC, LEE BH

Advantages of a buried-gate structure for graphene field-effect transistor

SEMICONDUCTOR SCIENCE TECHNOLOGY

LEE SK, KIM YJ, HEO S, PARK W, YOO TJ, CHO C, HWANG HJ, LEE BH

Gate-Controlled Graphene-Silicon Schottky Junction Photodetector

SMALL

CHANG KE, YOO TJ, KIM C, KIM YJ, LEE SK, KIM SY, HEO S, KWON MG, LEE BH

High-pressure oxygen annealing of Al2O3 passivation layer for performance enhancement of graphene field-effect transistors

NANOTECHNOLOGY

KIM YJ, KIM SM, HEO S, LEE H, LEE HI, CHANG KE, LEE BH

Growth Mechanism of Multi-Layer Graphene at Low-Temperature by Plasma Enhanced Chemical Vapor Deposition

KOREAN JOURNAL OF METALS MATERIALS

YUN K, CHEANG D, HYUN J, ROH A, HEO S, CHENG LX, KIM JY, CHA PR, LEE J, NAM HS