国家/地区 Korea（4）
关键词 MEMORY（4）
出版物 NANOTECHNOLOGY（2）
出版时间
机构 JEJU NATL UN.（2）
作者 KHAN SA（2） KIM J（2） KIM WY（2） RAHMAN SA（2）

Characterization of a Ferroelectric-Gated Graphene Memory Device Fabricated on a Flexible Substrate by Transfer Process

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KHAN SA, JEONG HS, RAHMAN SA, BAE JH, KIM WY

Effect of sidewall passivation in ferroelectric-gated graphene memory device

MOLECULAR CRYSTALS LIQUID CRYSTALS

KHAN SA, RAHMAN SA, KIM WY

Graphene-quantum-dot nonvolatile charge-trap flash memories

NANOTECHNOLOGY

JOO SS, KIM J, KANG SS, KIM S, CHOI SH, HWANG SW

Graphene quantum dots as a highly efficient solution-processed charge trapping medium for organic nano-floating gate memory

NANOTECHNOLOGY

JI Y, KIM J, CHA AN, LEE SA, LEE MW, SUH JS, BAE S, MOON BJ, LEE SH, LEE DS, WANG G, KIM TW