国家/地区 Korea（7）
关键词 GRAPHENE（4） HETEROSTRUCTURE（2） PHOTODETECTOR（2）
出版物
出版时间 2018（3） 2019（2）
机构 GWANGJU INST SCI TECHNOL（7）
作者 CHANG KE（7）

Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifier

AIP ADVANCES

HEO S, KWON MG, LEE HI, KIM C, KIM SM, CHANG KE, LEE Y, LEE BH

High-Responsivity Near-Infrared Photodetector Using Gate-Modulated Graphene/Germanium Schottky Junction

ADVANCED ELECTRONIC MATERIALS

CHANG KE, KIM C, YOO TJ, KWON MG, HEO S, KIM SY, HYUN Y, YOO JI, KO HC, LEE BH

Gate-Controlled Graphene-Silicon Schottky Junction Photodetector

SMALL

CHANG KE, YOO TJ, KIM C, KIM YJ, LEE SK, KIM SY, HEO S, KWON MG, LEE BH

High-pressure oxygen annealing of Al2O3 passivation layer for performance enhancement of graphene field-effect transistors

NANOTECHNOLOGY

KIM YJ, KIM SM, HEO S, LEE H, LEE HI, CHANG KE, LEE BH

Zero-Bias Operation of CVD Graphene Photodetector with Asymmetric Metal Contacts

ACS PHOTONICS

YOO TJ, KIM YJ, LEE SK, KANG CG, CHANG KE, HWANG HJ, REVANNATH N, LEE BH

A graphene barristor using nitrogen profile controlled ZnO Schottky contacts

NANOSCALE

HWANG HJ, CHANG KE, YOO WB, SHIM CH, LEE SK, YANG JH, KIM SY, LEE Y, CHO C, LEE BH

Demonstration of Complementary Ternary Graphene Field-Effect Transistors

SCIENTIFIC REPORTS

KIM Y, KIM SY, NOH J, SHIM C, JUNG U, LEE SK, CHANG KE, CHO C, LEE BH