国家/地区 Korea（5）
关键词
出版物
出版时间 2011（3）
机构 GWANGJU INST SCI TECHNOL（5）
作者 CHUNG HJ（5）

Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices

CARBON

LEE SK, KANG CG, LEE YG, CHO C, PARK E, CHUNG HJ, SEO S, LEE HD, LEE BH

Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment

IEEE ELECTRON DEVICE LETTERS

KANG CG, LEE SK, LEE YG, HWANG HJ, CHO C, LIM SK, HEO J, CHUNG HJ, YANG H, SEO S, LEE BH

Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask

NANOTECHNOLOGY

KANG CG, KANG JW, LEE SK, LEE SY, CHO CH, HWANG HJ, LEE YG, HEO J, CHUNG HJ, YANG H, SEO S, PARK SJ, KO KY, AHN J, LEE BH

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

APPLIED PHYSICS LETTERS

LEE YG, KANG CG, JUNG UJ, KIM JJ, HWANG HJ, CHUNG HJ, SEO S, CHOI R, LEE BH

Origin of the channel width dependent field effect mobility of graphene field effect transistors

MICROELECTRONIC ENGINEERING

LEE YG, LIM SK, KANG CG, KIM YJ, CHOI DH, CHUNG HJ, CHOI R, LEE BH