国家/地区 Korea（3）
关键词 FERROELECTRIC（2） GRAPHENE（2）
出版物 JOURNAL OF NANOSCIENCE NANOTECHNOLOGY（3）
出版时间 2019（2）
机构 JEJU NATL UNIV（3）
作者 KIM WY（2）

Characterization of a Ferroelectric-Gated Graphene Memory Device Fabricated on a Flexible Substrate by Transfer Process

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KHAN SA, JEONG HS, RAHMAN SA, BAE JH, KIM WY

Improved Retention Performance in Graphene-Ferroelectric Memory Device Through Mitigation of the Surface Roughness of the Ferroelectric Layer

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KIM WY

ZnO Piezoelectric Fine Wire Gated Graphene Oxide Field Effect Transistor

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

MOHAN R, KRISHNANNOORTHY K, KIM GS, KIM SJ