国家/地区 Korea（7）
关键词 GRAPHENE（7）
出版物 ACS NANO（3） ACS APPLIED MATERIA.（2）
出版时间 2020（3）
机构 SUNGKYUNKWAN UNIV（7）
作者 YU WJ（7）

Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor

ACS NANO

LEE I, KANG WT, KIM JE, KIM YR, WON UY, LEE YH, YU WJ

Efficient photovoltaic effect in graphene/h-BN/silicon heterostructure self-powered photodetector

NANO RESEARCH

WON UY, LEE BH, KIM YR, KANG WT, LEE I, KIM JE, LEE YH, YU WJ

Unveiling the Hot Carrier Distribution in Vertical Graphene/h-BN/Au van der Waals Heterostructures for High-Performance Photodetector

ACS APPLIED MATERIALS INTERFACES

KIM YR, PHAN TL, SHIN YS, KANG WT, WON UY, LEE I, KIM JE, KIM K, LEE YH, YU WJ

Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects

ACS APPLIED MATERIALS INTERFACES

LEE I, KIM JN, KANG WT, SHIN YS, LEE BH, YU WJ

Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier

ACS NANO

LEE I, KANG WT, SHIN YS, KIM YR, WON UY, KIM K, DUONG DL, LEE K, HEO J, LEE YH, YU WJ

Synthesis of Edge-Closed Graphene Ribbons with Enhanced Conductivity

ACS NANO

YU WJ, CHAE SH, PERELLO D, LEE SY, HAN GH, YUN M, LEE YH

Theoretical and Experimental Investigation of Graphene/High-kappa/p-Si Junctions

IEEE ELECTRON DEVICE LETTERS

SHIM J, YOO G, KANG DH, JUNG WS, BYUN YC, KIM H, KANG WT, YU WJ, YU HY, PARK Y, PARK JH