国家/地区 Malaysia（4）
关键词
出版物 MICROELECTRONICS RE.（2）
出版时间 2012（3）
机构 UNIV SAINS MALAYSIA（4）
作者 AHMADI MT（4）

Theory of Ionization Mechanism in Graphene Nanoribbons

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

GHADIRY M, BIN ABD MANAF A, NADI M, RAHMANI M, AHMADI MT

Ionization coefficient of monolayer graphene nanoribbon

MICROELECTRONICS RELIABILITY

GHADIRY M, BIN ABD MANAF A, NADI M, RAHMANI M, AHMADI MT

Modelling and Simulation of Saturation Region in Double Gate Graphene Nanoribbon Transistors

SEMICONDUCTORS

GHADIRY MH, NADI M, RAHMANI M, AHMADI MT, BIN ABD MANAF A

A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors

MICROELECTRONICS RELIABILITY

GHADIRY MH, NADI M, AHMADI MT, ABD MANAF A