国家/地区 Poland（6）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（6）
出版时间 2014（2）
机构 UNIV WARSAW（3） POLISH ACAD .（2）
作者 BARANOWSKI JM（6）

Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

JOURNAL OF APPLIED PHYSICS

URBAN JM, DABROWSKI P, BINDER J, KOPCIUSZYNSKI M, WYSMOLEK A, KLUSEK Z, JALOCHOWSKI M, STRUPINSKI W, BARANOWSKI JM

Structural defects in epitaxial graphene layers synthesized on C-terminated 4H-SiC (000(1)over-bar) surface-Transmission electron microscopy and density functional theory studies

JOURNAL OF APPLIED PHYSICS

BORYSIUK J, SOLTYS J, PIECHOTA J, KRUKOWSKI S, BARANOWSKI JM, STEPNIEWSKI R

Pinned and unpinned epitaxial graphene layers on SiC studied by Raman spectroscopy

JOURNAL OF APPLIED PHYSICS

GRODECKI K, BLASZCZYK JA, STRUPINSKI W, WYSMOLEK A, STEPNIEWSKI R, DRABINSKA A, SOCHACKI M, DOMINIAK A, BARANOWSKI JM

Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H-SiC

JOURNAL OF APPLIED PHYSICS

BORYSIUK J, BOZEK R, GRODECKI K, WYSMOLEK A, STRUPINSKI W, STEPNIEWSKI R, BARANOWSKI JM

Transmission electron microscopy and scanning tunneling microscopy investigations of graphene on 4H-SiC(0001)

JOURNAL OF APPLIED PHYSICS

BORYSIUK J, BOZEK R, STRUPINSKI W, WYSMOLEK A, GRODECKI K, STEPNIEWSKI R, BARANOWSKI JM

New X-ray insight into oxygen intercalation in epitaxial graphene grown on 4H-SiC(0001)

JOURNAL OF APPLIED PHYSICS

KOWALSKI G, TOKARCZYK M, DABROWSKI P, CIEPIELEWSKI P, MOZDZONEK M, STRUPINSKI W, BARANOWSKI JM