国家/地区 Russia（7）
关键词
出版物 JOURNAL OF APPLIED .（2）
出版时间 2013（2）
机构 RUSSIAN ACAD.（6）
作者 VYURKOV V（7）

All-graphene field-effect transistor based on lateral tunnelling

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SVINTSOV D, VYURKOV V, ORLIKOVSKY A, RYZHII V, OTSUJI T

Hydrodynamic electron transport and nonlinear waves in graphene

PHYSICAL REVIEW B

SVINTSOV D, VYURKOV V, RYZHII V, OTSUJI T

Voltage-controlled surface plasmon-polaritons in double graphene layer structures

JOURNAL OF APPLIED PHYSICS

SVINTSOV D, VYURKOV V, RYZHII V, OTSUJI T

Hydrodynamic model for electron-hole plasma in graphene

JOURNAL OF APPLIED PHYSICS

SVINTSOV D, VYURKOV V, YURCHENKO S, OTSUJI T, RYZHII V

Effect of "Mexican Hat" on Graphene Bilayer Field-Effect Transistor Characteristics

JAPANESE JOURNAL OF APPLIED PHYSICS

SVINTSOV D, VYURKOV V, RYZHII V, OTSUJI T

Effect of the Coulomb Scattering on Graphene Conductivity

JETP LETTERS

VYURKOV V, RYZHII V

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

SCIENTIFIC REPORTS

ALYMOV G, VYURKOV V, RYZHII V, SVINTSOV D