国家/地区 Singapore（13）
关键词 GRAPHENE（4） RAMAN（3） ANNEALING（2）
出版物 ACS NANO（3） APPLIED PHYSICS LET.（3）
出版时间 2008（5） 2010（5）
机构 NANYANG TECH.（10） NATL UNIV SI.（3）
作者 WANG HM（13）

How do the electron beam writing and metal deposition affect the properties of graphene during device fabrication?

NANOSCALE

SHEN XN, WANG HM, YU T

Self-Limited Oxidation: A Route to Form Graphene Layers from Graphite by One-Step Heating

SMALL

CONG CX, YU T, WANG HM, ZHENG KH, GAO PQ, CHEN XD, ZHANG Q

Hysteresis of Electronic Transport in Graphene Transistors

ACS NANO

WANG HM, WU YH, CONG CX, SHANG JZ, YU T

Raman Study on the G Mode of Graphene for Determination of Edge Orientation

ACS NANO

CONG CX, YU T, WANG HM

The effect of vacuum annealing on graphene

JOURNAL OF RAMAN SPECTROSCOPY

NI ZH, WANG HM, LUO ZQ, WANG YY, YU T, WU YH, SHEN ZX

Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

APPLIED PHYSICS LETTERS

WANG HM, ZHENG Z, WANG YY, QIU JJ, GUO ZB, SHEN ZX, YU T

Raman studies of monolayer graphene: The substrate effect

JOURNAL OF PHYSICAL CHEMISTRY C

WANG YY, NI ZH, YU T, SHEN ZX, WANG HM, WU YH, CHEN W, WEE ATS

Visibility study of graphene multilayer structures

JOURNAL OF APPLIED PHYSICS

TEO GQ, WANG HM, WU YH, GUO ZB, ZHANG J, NI ZH, SHEN ZX

Tunable stress and controlled thickness modification in graphene by annealing

ACS NANO

NI ZH, WANG HM, MA Y, KASIM J, WU YH, SHEN ZX

Electronic transport and layer engineering in multilayer graphene structures

APPLIED PHYSICS LETTERS

WANG HM, WU YH, NI ZH, SHEN ZX