国家/地区 Spain（6）
关键词 NANOSTRUCTURED MATE.（2）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2008（2） 2009（2）
机构 CSIC（5）
作者 RIUS G（6）

Electronic interface and charge carrier density in epitaxial graphene on silicon carbide. A review on metal-graphene contacts and electrical gating

APL MATERIALS

ASLANIDOU S, GARCIAGARCIA A, GODIGNON P, RIUS G

High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors

NATURE MATERIALS

MASVIDALCODINA E, ILLA X, DASILVA M, CALIA AB, DRAGOJEVIC T, VIDALROSASS EE, PRATSALFONSO E, MARTINEZAGUILAR J, DE LA CRUZ JM, GARCIACORTADELLA R, GODIGNON P, RIUS G, CAMASSA A, DEL CORRO E, BOUSQUET J, HEBERT C, DURDURAN T, VILLA R, SANCHEZVIVES MV, GARRIDO JA, GUIMERABRUNET A

Nanostructuring of epitaxial graphene layers on SiC by means of field-induced atomic force microscopy modification

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

RIUS G, CAMARA N, GODIGNON P, PEREZMURANO F, MESTRES N

Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC

PHYSICAL REVIEW B

CAMARA N, HUNTZINGER JR, RIUS G, TIBERJ A, MESTRES N, PEREZMURANO F, GODIGNON P, CAMASSEL J

Early stage formation of graphene on the C face of 6H-SiC

APPLIED PHYSICS LETTERS

CAMARA N, RIUS G, HUNTZINGER JR, TIBERJ A, MAGAUD L, MESTRES N, GODIGNON P, CAMASSEL J

Selective epitaxial growth of graphene on SiC

APPLIED PHYSICS LETTERS

CAMARA N, RIUS G, HUNTZINGER JR, TIBERJ A, MESTRES N, GODIGNON P, CAMASSEL J