国家/地区 Spain（9）
关键词 GRAPHENE（6） COMPACT MODEL（3） FIELDEFFECT TRANSIS.（3）
ANALOG（2） FET（2） INTRINSIC CAPACITAN.（2）
MODELING（2） RADIO FREQUENCY RF（2） VERILOGA（2）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（9）
出版时间 2016（3） 2020（3） 2011（2）
机构 UNIV AUTONOMA BARCELONA（9）
作者 JIMENEZ D（9） PASADAS F（4） HAPPY H（2） MAVREDAKIS N（2）
PALLECCHI E（2） WEI W（2）

Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

PACHECOSANCHEZ A, MAVREDAKIS N, FEIJOO PC, WEI W, PALLECCHI E, HAPPY H, JIMENEZ D

Low-Frequency Noise Parameter Extraction Method for Single-Layer Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

MAVREDAKIS N, WEI W, PALLECCHI E, VIGNAUD D, HAPPY H, CORTADELLA RG, SCHAEFER N, CALIA AB, GARRIDO JA, JIMENEZ D

Non-Quasi-Static Effects in Graphene Field-Effect Transistors Under High-Frequency Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part I: Compact Modeling of GFET Intrinsic Capacitances (vol 63, pg 2936, 2016)

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Explicit Drain Current, Charge and Capacitance Model of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JIMENEZ D

Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

JIMENEZ D, MOLDOVAN O

The Role of the Fermi Level Pinning in Gate Tunable Graphene-Semiconductor Junctions

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHAVES FA, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part I: Compact Modeling of GFET Intrinsic Capacitances

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part II: Circuit Performance Benchmarking

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D