国家/地区 Sweden（9）
关键词 GRAPHENE（6） FIELDEFFECT TRANSIS.（3） MAXIMUM FREQUENCY O.（2）
TRANSIT FREQUENCY（2）
出版物 APPLIED PHYSICS LET.（2） IEEE TRANSACTIONS O.（2）
出版时间 2017（4） 2020（3）
机构 CHALMERS UNIV TECHNOL（9）
作者 VOROBIEV A（9）

Effects of Self-Heating on f(T) and f(max) Performance of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

BONMANN M, KRIVIC M, YANG XX, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE TECHNOLOGY

YANG XX, VOROBIEV A, JEPPSON K, STAKE J

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

Graphene Field-Effect Transistors With High Extrinsic f(T) and f(max)

IEEE ELECTRON DEVICE LETTERS

BONMANN M, ASAD M, YANG XX, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

Charge carrier velocity in graphene field-effect transistors

APPLIED PHYSICS LETTERS

BONMANN M, VOROBIEV A, ANDERSSON MA, STAKE J

A 400-GHz Graphene FET Detector

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE TECHNOLOGY

GENERALOV AA, ANDERSSON MA, YANG XX, VOROBIEV A, STAKE J

A flexible graphene terahertz detector

APPLIED PHYSICS LETTERS

YANG XX, VOROBIEV A, GENERALOV A, ANDERSSON MA, STAKE J

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

BONMANN M, VOROBIEV A, STAKE J, ENGSTROM O

Feasibility of Ambient RF Energy Harvesting for Self-Sustainable M2M Communications Using Transparent and Flexible Graphene Antennas

IEEE ACCESS

ANDERSSON MA, OZCELIKKALE A, JOHANSSON M, ENGSTROM U, VOROBIEV A, STAKE J