国家/地区 Sweden（3）
关键词 FIELDEFFECT TRANSISTORS FETS（3）
出版物
出版时间
机构 CHALMERS UNIV TECHNOL（3）
作者 STAKE J（3）

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE TECHNOLOGY

YANG XX, VOROBIEV A, JEPPSON K, STAKE J

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, CHEREDNICHENKO S, VUKUSIC J, STAKE J

A 185-215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

ANDERSSON MA, ZHANG YX, STAKE J