国家/地区 Sweden（5）
关键词 FIELDEFFECT TRANSIS.（3） GRAPHENE（3） MAXIMUM FREQUENCY O.（2）
TRANSIT FREQUENCY（2）
出版物
出版时间 2017（2） 2020（2）
机构 CHALMERS UNIV TECHNOL（5）
作者 BONMANN M（5）

Effects of Self-Heating on f(T) and f(max) Performance of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

BONMANN M, KRIVIC M, YANG XX, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

Graphene Field-Effect Transistors With High Extrinsic f(T) and f(max)

IEEE ELECTRON DEVICE LETTERS

BONMANN M, ASAD M, YANG XX, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

Charge carrier velocity in graphene field-effect transistors

APPLIED PHYSICS LETTERS

BONMANN M, VOROBIEV A, ANDERSSON MA, STAKE J

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

BONMANN M, VOROBIEV A, STAKE J, ENGSTROM O