国家/地区 Switzerland（11）
关键词 QUANTUM DOT（11）
出版物 APPLIED PHYSICS LET.（3） NANO LETTERS（2）
出版时间 2009（3） 2008（2）
机构 ETH（6） SWISS FED IN.（3）
作者 ENSSLIN K（11）

Charge Detection in Gate-Defined Bilayer Graphene Quantum Dots

NANO LETTERS

KURZMANN A, OVERWEG H, EICH M, PALLY A, RICKHAUS P, PISONI R, LEE Y, WATANABE K, TANIGUCHI T, IHN T, ENSSLIN K

Edge channel confinement in a bilayer graphene n-p-n quantum dot

NEW JOURNAL OF PHYSICS

OVERWEG H, RICKHAUS P, EICH M, LEE Y, PISONI R, WATANABE K, TANIGUCHI T, IHN T, ENSSLIN K

Electronic transport in graphene nanostructures on SiO2

SOLID STATE COMMUNICATIONS

IHN T, DROSCHER S, SCHNEZ S, KNOWLES H, GUTTINGER J, HUEFNER M, STAMPFER C, MEIR Y, ENSSLIN K

Transport through graphene double dots

APPLIED PHYSICS LETTERS

MOLITOR F, DROSCHER S, GUTTINGER J, JACOBSEN A, STAMPFER C, IHN T, ENSSLIN K

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

STAMPFER C, SCHURTENBERGER E, MOLITOR F, GUTTINGER J, IHN T, ENSSLIN K

Observation of excited states in a graphene quantum dot

APPLIED PHYSICS LETTERS

SCHNEZ S, MOLITOR F, STAMPFER C, GUTTINGER J, SHORUBALKO I, IHN T, ENSSLIN K

Charge detection in graphene quantum dots

APPLIED PHYSICS LETTERS

GUTTINGER J, STAMPFER C, HELLMULLER S, MOLITOR F, IHN T, ENSSLIN K

Analytic model of the energy spectrum of a graphene quantum dot in a perpendicular magnetic field

PHYSICAL REVIEW B

SCHNEZ S, ENSSLIN K, SIGRIST M, IHN T

The importance of edges in reactive ion etched graphene nanodevices

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

BISCHOFF D, SIMONET P, VARLET A, OVERWEG HC, EICH M, IHN T, ENSSLIN K

Tunable Valley Splitting and Bipolar Operation in Graphene Quantum Dots

NANO LETTERS

TONG CY, GARREIS R, KNOTHE A, EICH M, SACCHI A, WATANABE K, TANIGUCHI T, FAL KO V, IHN T, ENSSLIN K, KURZMANN A