国家/地区 Switzerland（6）
关键词 GRAPHENE（2） SINGLE ELECTRON TRA.（2）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2007（2） 2010（2）
机构 SWISS FED INST TECHNOL（6）
作者 STAMPFER C（6）

Transport through a strongly coupled graphene quantum dot in perpendicular magnetic field

NANOSCALE RESEARCH LETTERS

GUTTINGER J, STAMPFER C, FREY T, IHN T, ENSSLIN K

Selective Chemical Modification of Graphene Surfaces: Distinction Between Single- and Bilayer Graphene

SMALL

KOEHLER FM, JACOBSEN A, ENSSLIN K, STAMPFER C, STARK WJ

Quantum capacitance and density of states of graphene

APPLIED PHYSICS LETTERS

DROSCHER S, ROULLEAU P, MOLITOR F, STUDERUS P, STAMPFER C, ENSSLIN K, IHN T

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

STAMPFER C, SCHURTENBERGER E, MOLITOR F, GUTTINGER J, IHN T, ENSSLIN K

Raman imaging of doping domains in graphene on SiO2

APPLIED PHYSICS LETTERS

STAMPFER C, MOLITOR F, GRAF D, ENSSLIN K, JUNGEN A, HIEROLD C, WIRTZ L

Raman mapping of a single-layer to double-layer graphene transition

EUROPEAN PHYSICAL JOURNALSPECIAL TOPICS

GRAF D, MOLITOR F, ENSSLIN K, STAMPFER C, JUNGEN A, HIEROLD C, WIRTZ L