国家/地区 Taiwan（4）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2014（2）
机构 NATL TAIWAN .（2）
作者 CHANG SW（4）

Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels

APPLIED PHYSICS LETTERS

LIN MY, CHEN YH, WANG CH, SU CF, CHANG SW, LEE SC, LIN SY

Fermi-level shifts in graphene transistors with dual-cut channels scraped by atomic force microscope tips

APPLIED PHYSICS LETTERS

LIN MY, CHEN YH, SU CF, CHANG SW, LEE SC, LIN SY

Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition

JOURNAL OF PHYSICS DAPPLIED PHYSICS

LIN MY, WANG CH, CHANG SW, LEE SC, LIN SY

Charge Storage of Isolated Monolayer Molybdenum Disulfide in Epitaxially Grown MoS2/Graphene Heterostructures for Memory Device Applications

ACS APPLIED MATERIALS INTERFACES

TSAI PC, HUANG CW, CHANG SJ, CHANG SW, LIN SY