国家/地区 Taiwan（6）
关键词 ELECTRICAL PROPERTY（2） GRAPHENE（2） SI（2）
出版物
出版时间 2014（2） 2015（2）
机构 NATL CHANGHUA UNIV EDUC（6）
作者 LIN JH（6）

Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

APPLIED SURFACE SCIENCE

LIN YJ, LIN JH

Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

THIN SOLID FILMS

LIN JH, ZENG JJ, LIN YJ

Effects of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide doped with a conductive polymer

SEMICONDUCTOR SCIENCE TECHNOLOGY

ZENG JJ, RUAN CH, LIN JH, LIN YJ

Current transport mechanism of heterojunction diodes based on the reduced graphene oxide-based polymer composite and n-type Si

APPLIED PHYSICS LETTERS

LIN JH, ZENG JJ, SU YC, LIN YJ

Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

TSAI CL, LIN YJ, LIN JH

Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

LIN JH, LIN YJ, CHANG HC