国家/地区 Taiwan（5）
关键词 SI（5）
出版物 APPLIED SURFACE SCI.（2）
出版时间 2014（3）
机构 NATL CHANGHUA UNIV EDUC（5）
作者 LIN YJ（5） LIN JH（2） ZENG JJ（2）

Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices

INDIAN JOURNAL OF PHYSICS

LIN YJ, WU CL, KE ZY, CHANG HC

Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

APPLIED SURFACE SCIENCE

LIN YJ, ZENG JJ

Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

APPLIED SURFACE SCIENCE

LIN YJ, LIN JH

Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

THIN SOLID FILMS

LIN JH, ZENG JJ, LIN YJ

Correlation between phonon and impurity scatterings, potential fluctuations and leakage conduction of graphene/n-type Si Schottky diodes

SUPERLATTICES MICROSTRUCTURES

LIN YJ